Heavily carbon doped p-type GaAs and GaAlAs grown by metalorganic molecular beam epitaxy
- 1 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 145-149
- https://doi.org/10.1016/0022-0248(89)90369-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Metalorganic Molecular-Beam Epitaxial Growth and Characterization of GaAs Using Trimethyl- and Triethyl-Gallium SourcesJapanese Journal of Applied Physics, 1985
- Molecular beam epitaxial growth of GaAs using trimethylgallium as a Ga sourceJournal of Applied Physics, 1984