A high-efficiency GaAlAs double-heterostructure photovoltaic detector
- 15 October 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (8), 721-723
- https://doi.org/10.1063/1.90515
Abstract
An antireflection‐coated GaAlAs double‐heterostructure photovoltaic detector is described whose extrinsic power conversion efficiency is 56% when used with a focused 8075‐μm wavelength laser beam. This, to our knowledge, is the highest photovoltaic efficiency yet reported. A partially reflective rear contact provides extrinsic quantum efficiencies exceeding 0.90 with a relatively thin active region. By restricting the diameter of this contact to 50 μm and using high dopings to reduce series resistance, open‐circuit voltages of 1.15 V and fill factors up to 0.84 are obtained. The series resistance was 3.0 Ω, with 1.0 Ω being attributable to the contacts.Keywords
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