Temperature dependence of silicon doping of GaAs by SiH4 and Si2H6 in atmospheric pressure metalorganic chemical vapour deposition
- 1 November 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 98 (3), 249-254
- https://doi.org/10.1016/0022-0248(89)90139-5
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- Three‐Dimensional Flow Effects in Silicon CVD in Horizontal ReactorsJournal of the Electrochemical Society, 1988
- Gas phase and surface reactions in Si doping of GaAs by silanesJournal of Crystal Growth, 1988
- Silicon doping using disilane in low-pressure OMVPE of GaAsJournal of Crystal Growth, 1987
- Gas phase depletion and flow dynamics in horizontal MOCVD reactorsJournal of Crystal Growth, 1986
- Doping of gallium arsenide in a low pressure organometallic CVD systemJournal of Crystal Growth, 1986
- A Study of Silicon Incorporation in GaAs MOCVD LayersJournal of the Electrochemical Society, 1985
- Silicon doping of GaAs and AlxGa1−xAs using disilane in metalorganic chemical vapor depositionJournal of Crystal Growth, 1984
- Unexpectedly high energy photoluminescence of highly Si doped GaAs grown by MOVPEJournal of Crystal Growth, 1982
- Silicon and germanium doping of epitaxial gallium arsenide grown by the trimethylgallium-arsine methodJournal of Crystal Growth, 1979
- A New Method for Growing GaAs Epilayers by Low Pressure OrganometallicsJournal of the Electrochemical Society, 1979