Antiphase disorder in epitaxial GaAs films grown on CaxSr1−xF2 (100) with higher crystallographic symmetry

Abstract

Antiphase disorder in the top layer of GaAs/Ca_0.5Sr_0.5F₂/GaAs(100) semiconductor‐on‐insulator structure was revealed by preferential chemical etching. The domains were rotated by 90° with respect to each other on the (100) surface. The origin of this antiphase disorder is considered to be the growth of the twofold symmetrical crystal of GaAs(100) on the fourfold symmetrical crystal of Ca_xSr_1−xF₂(100).