Incidence angle effect of a hydrogen plasma beam for the cleaning of semiconductor surfaces
- 21 August 1989
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (8), 760-762
- https://doi.org/10.1063/1.101798
Abstract
Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of incidence. Similar improvement of smoothness was observed with the glancing angle of incidence on a Si surface when it was compared with perpendicular incidence. The mechanism is discussed considering momentum transfer parallel to the surface in the collision process and the resultant migration enhancement on the surface.Keywords
This publication has 8 references indexed in Scilit:
- New low-temperature process for growth of GaAs on Si with metalorganic molecular beam epitaxy assisted by a hydrogen plasmaApplied Physics Letters, 1988
- Low-temperature GaAs epitaxial growth using electron-cyclotron resonance/metalorganic-molecular-beam epitaxyJournal of Applied Physics, 1988
- Theory of ripple topography induced by ion bombardmentJournal of Vacuum Science & Technology A, 1988
- Molecular beam epitaxial growth of III-V compound semiconductor in the presence of a low-energy ion beam: A Monte Carlo simulation studyApplied Physics Letters, 1987
- Photoluminescence characteristics of AlGaAs-GaAs single quantum wells grown by migration-enhanced epitaxy at 300 °C substrate temperatureApplied Physics Letters, 1987
- Damage and contamination-free GaAs and AlGaAs etching using a novel ultrahigh-vacuum reactive ion beam etching system with etched surface monitoring and cleaning methodJournal of Vacuum Science & Technology A, 1986
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- Rheed evidence for a domain structure of GaAs(001)−2 × 4 AND −4 × 2 reconstructed surfacesSurface Science, 1982