Structural study of diamond film formed on silicon wafer by hot-filament chemical vapor deposition method
- 19 December 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (25), 3203-3205
- https://doi.org/10.1063/1.112413
Abstract
Very important evidence has been obtained by high‐resolution cross‐sectional electron microscopy (HREM) that diamond films prepared by the hot‐filament chemical vapor deposition (HFCVD) method were grown epitaxially on the mirror‐polished Si(100) substrate in a local area with surface biasing pretreatment. There is about a 7.3° angle between Si (100) and D(100) heteroepitaxial crystalline planes. The same type of twinnings (coherent twin boundaries of type, Σ=3) exist on and near the interface. High preferential oriented diamond films have been observed by scanning electron microscopy (SEM). From the discussion, the pretreatment of the substrate is a key factor for the heteroepitaxy of diamond on Si wafer.Keywords
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