Highly reliable 1.55 µm GaInAsP laser diodes buried with semi-insulating iron-doped InP
- 4 August 1994
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 30 (16), 1305-1306
- https://doi.org/10.1049/el:19940889
Abstract
Highly reliable 1.55 µm GaInAsP/InP laser diodes buried with semi-insulating iron-doped InP are presented that operate stably for more than 5000 h with a degradation ratio of less than 5 × 10-6/h. The lifetime at 50°C is estimated to be more than 105 h.Keywords
This publication has 7 references indexed in Scilit:
- Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InPJournal of Electronic Materials, 1992
- 25 GHz bandwidth 1.55 μm GaInAsP p-doped strained multiquantum-well lasersElectronics Letters, 1992
- 1.55 μm buried heterostructure laser via regrowth of semi-insulating InP:Fe around vertical mesas fabricated by reactive ion etching using methane and hydrogenApplied Physics Letters, 1991
- MOVPE regrowth of semi-insulating InP around reactive ion etched laser mesasElectronics Letters, 1991
- High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasersApplied Physics Letters, 1990
- 1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogenApplied Physics Letters, 1990
- Wide-bandwidth and high-power InGaAsP distributed feedback lasersJournal of Applied Physics, 1989