1.5 μm GaInAsP/InP buried-heterostructure laser diode fabricated by reactive ion etching using a mixture of ethane and hydrogen
- 23 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (17), 1641-1642
- https://doi.org/10.1063/1.103151
Abstract
A 1.5 μm GaInAsP/InP buried-heterostructure laser diode was fabricated by reactive ion etching using a mixture of ethane and hydrogen for the formation of mesa stripe. Blocking layers were regrown on the dry etched wafers by liquid phase epitaxy. Continuous-wave operation was obtained at room temperature. A threshold current as low as 15 mA was achieved, which is superior to that of the same structure laser diode fabricated by conventional chemical etching.Keywords
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