Mechanism of laser-induced metal-semiconductor electrical connections in MOS structures
- 1 May 1976
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 47 (5), 2120-2128
- https://doi.org/10.1063/1.322858
Abstract
This paper describes in detail an experimental study of the laser‐induced metal‐semiconductor connections in MOS structures. Quantitative results concerning these connections, and their dependence on pulse width, pulse power, and the number of pulses are given. This information is valuable when the laser is used for interconnecting integrated circuits and similar devices.Keywords
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