A low-voltage power MOSFET with a fast-recovery body diode for synchronous rectification
- 4 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- SiC power devices — Present status, applications and future perspectivePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2011
- High performance power DMOSFET with integrated Schottky diodePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Self-aligned UMOSFET's with a specific on-resistance of 1 mΩ.cm2IEEE Transactions on Electron Devices, 1987
- An ultra-low on-resistance power MOSFET fabricated by using a fully self-aligned processIEEE Transactions on Electron Devices, 1987
- Techniques for small-signal analysis of semiconductor devicesIEEE Transactions on Electron Devices, 1985
- The concept of generation and recombination lifetimes in semiconductorsIEEE Transactions on Electron Devices, 1982
- Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfacesIEEE Transactions on Electron Devices, 1980