Channel Protection Layer Effect on the Performance of Oxide TFTs
- 4 December 2009
- journal article
- research article
- Published by Wiley in ETRI Journal
- Vol. 31 (6), 653-659
- https://doi.org/10.4218/etrij.09.1209.0043
Abstract
No abstract availableKeywords
This publication has 24 references indexed in Scilit:
- Transparent and Photo‐stable ZnO Thin‐film Transistors to Drive an Active Matrix Organic‐Light‐ Emitting‐Diode Display PanelAdvanced Materials, 2009
- Amorphous oxide TFT and their applications in electrophoretic displaysPhysica Status Solidi (a), 2008
- High mobility indium free amorphous oxide thin film transistorsApplied Physics Letters, 2008
- Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking MemoryIEEE Electron Device Letters, 2008
- High performance thin film transistors with cosputtered amorphous indium gallium zinc oxide channelApplied Physics Letters, 2007
- Investigating the stability of zinc oxide thin film transistorsApplied Physics Letters, 2006
- Fully Transparent ZnO Thin‐Film Transistor Produced at Room TemperatureAdvanced Materials, 2005
- Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductorsNature, 2004
- Transparent oxide optoelectronicsMaterials Today, 2004
- Transparent ElectronicsScience, 2003