Amorphous oxide TFT and their applications in electrophoretic displays
- 4 August 2008
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 205 (8), 1885-1894
- https://doi.org/10.1002/pssa.200778910
Abstract
Applications of amorphous oxide TFTs to electrophoretic display have been demonstrated. First, we focus attention on the low process temperature of amorphous In–Ga–Zn–O (a‐IGZO) TFT and successfully fabricated a‐IGZO TFT array onto poly‐ethylene‐naphthalate (PEN) films at room temperature. Subsequently, an a‐IGZO TFT array was combined with electrophoretic display and we have successfully driven a flexible electrophoretic display by a‐IGZO TFT. The image of the flexible display was not affected by bending. Secondly, taking advantage of the transparency of oxide TFT, we propose a novel display structure for electronic paper. In our display structure, an oxide TFT array is fabricated directly onto a color filter array, which facilitates good alignment of the color filter and the TFT array. This TFT and color filter array were laminated with electrophoretic frontplane and positioned at the viewing side of the display. In this structure, the electrophoretic display is driven from the viewing side of the display, which we call the “Front Drive” structure. We have successfully displayed QVGA 4 inch color electronic paper by the “Front Drive” structure.This publication has 70 references indexed in Scilit:
- "Front Drive" Display Structure for Color Electronic Paper Using Fully Transparent Amorphous Oxide TFT ArrayIEICE Transactions on Electronics, 2007
- Transparent ZnO thin film transistor fabricated by sol-gel and chemical bath deposition combination methodApplied Physics Letters, 2007
- Low leakage current—stacked MgO∕Bi1.5Zn1.0Nb1.5O7 gate insulator— for low voltage ZnO thin film transistorsApplied Physics Letters, 2006
- Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm2/VsPhysica Status Solidi (RRL) – Rapid Research Letters, 2006
- High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputteringApplied Physics Letters, 2006
- Flat panel displays for ubiquitous product applications and related impurity doping technologiesJournal of Applied Physics, 2006
- ZnO thin-film transistors with polycrystalline (Ba,Sr)TiO3 gate insulatorsApplied Physics Letters, 2006
- Transparent ring oscillator based on indium gallium oxide thin-film transistorsSolid-State Electronics, 2006
- Probing the work function of a gate metal with a top-gate ZnO-thin-film transistor with a polymer dielectricApplied Physics Letters, 2006
- Flexible Grayscale Ferroelectric Liquid Crystal Device Containing Polymer Walls and NetworksJapanese Journal of Applied Physics, 2002