Polyimide passivation of In0.53Ga0.47As, InP, and InGaAsP/InP p-n junction structures
- 1 January 1984
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (1), 145-147
- https://doi.org/10.1063/1.94583
Abstract
Techniques for passivating In0.53Ga0.47As, InGaAsP, InP, and InGaAsP/InP p‐n junction structures with polyimide have been developed. Low stable leakage current is maintained for prolonged bias, even after exposure to high temperatures (∼320 °C) during packaging. 150‐μm‐diam In0.53Ga0.47As photodiodes with a breakdown voltage of ∼50 V were passivated with polyimide and were found to consistently have leakage currents of ∼10 nA at a 20‐V bias.Details of the passivation process are given.Keywords
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