Schottky I/sup 2/L
- 1 October 1975
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 10 (5), 343-348
- https://doi.org/10.1109/jssc.1975.1050621
Abstract
Schottky I/SUP 2/L uses the principles of integrated injection logic (I/SUP 2/L/MTL) and the properties of ion implantation to obtain improved performance at the same densities as conventional I/SUP 2/L. Schottky diodes are formed in the multicollectors of the switching transistor and reduce the signal swing, thus improving the power delay efficiency. An increase in the intrinsic speed limit is also feasible. The Schottky I/SUP 2/L structure and characteristics are described and contrasted with conventional I/SUP 2/L. A model which is useful for its design is discussed. Integrated test structures which provide direct comparison between conventional and Schottky I/SUP 2/L performance have been fabricated. The experimental results demonstrate a factor of 2 improvement in power-delay efficiency of Schottky I/SUP 2/L over conventional I/SUP 2/L.Keywords
This publication has 9 references indexed in Scilit:
- Schottky I/sup 2/LIEEE Journal of Solid-State Circuits, 1975
- Schottky transistor logicPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1975
- The injection model-a structure-oriented model for merged transistor logic (MTL)IEEE Journal of Solid-State Circuits, 1974
- Terminal-oriented model for merged transistor logic (MTL)IEEE Journal of Solid-State Circuits, 1974
- Integrated injection logic-present and futureIEEE Journal of Solid-State Circuits, 1974
- Integrated injection logic: a new approach to LSIIEEE Journal of Solid-State Circuits, 1972
- Merged-transistor logic (MTL)-a low-cost bipolar logic conceptIEEE Journal of Solid-State Circuits, 1972
- An Integral Charge Control Model of Bipolar TransistorsBell System Technical Journal, 1970
- Large-Signal Behavior of Junction TransistorsProceedings of the IRE, 1954