Dual species ion implantation in GaAs
- 1 January 1980
- journal article
- Published by Taylor & Francis in Radiation Effects
- Vol. 48 (1-4), 91-95
- https://doi.org/10.1080/00337578008209235
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Chemical Vapor Deposition of Silicon Nitride: Encapsulant Layers for Annealing Gallium ArsenideJournal of the Electrochemical Society, 1978
- Fast diffusion of elevated-temperature ion-implanted Se in GaAs as measured by secondary ion mass spectrometryApplied Physics Letters, 1978
- GaAs Hall-effect devices fabricated by ion-implantation techniqueElectronics Letters, 1978
- Selenium implantation in GaAsSolid-State Electronics, 1977
- Enhancement of the donor activity of implanted selenium in GaAs by gallium implantationApplied Physics Letters, 1976
- Anodic Oxidation of GaAs as a Technique to Evaluate Electrical Carrier Concentration ProfilesJournal of the Electrochemical Society, 1975
- Effect of dual implants into GaAsElectronics Letters, 1975
- Ion implantation in compound semiconductors–an approach based on solid state theoryRadiation Effects, 1973
- Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300°KSolid-State Electronics, 1968
- Heavy doped n-type single crystal epitaxial layers of gallium arsenideSolid-State Electronics, 1964