Self-aligned three-dimensional Ga1−xAlxAs structures grown by molecular beam epitaxy

Abstract

Local thicknesses of a GaAs epitaxial layer grown on a mesa stripe by semiparallel Ga and As₄ molecular beams have been found to be proportional to cosφ_Ga, where φ_Ga is a local incident angle of the Ga beam to a local crystal growing surface. Submicron‐thick three‐dimensional GaAs‐Ga_1−xAl_xAs multilayers have been grown self‐aligningly on corrugated structures with a 8‐μm period. The layer thicknesses and AlAs compositions (x) are also interpreted by the local incident angles of Ga and Al beams, while evidence of atom diffusion is revealed.