High temperature deformation behaviour of MoSi2 and WSi2 single crystals
- 1 May 1990
- journal article
- research article
- Published by Springer Nature in Journal of Materials Science
- Vol. 25 (5), 2487-2492
- https://doi.org/10.1007/bf00638047
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Growth of MoSi2 with preferential orientation on (100) siliconApplied Physics Letters, 1984
- Formation kinetics of MoSi2 induced by cw scanned laser beamApplied Physics Letters, 1982
- Crystalline Structure Changes of Molybdenum Silicide Films Deposited by Sputtering and by Coevaporation after Isochronal AnnealingJournal of the Electrochemical Society, 1982
- Hexagonal WSi2 in cosputtered (tungsten and silicon) mixtureJournal of Applied Physics, 1981
- Observations on the hexagonal form of MoSi2 and WSi2 films produced by ion implantation and on related snowplow effectsJournal of Applied Physics, 1980
- Refractory metal silicide formation induced by As+ implantationApplied Physics Letters, 1980
- The formation of silicides in Mo-W Bilayer films on si substrates: A marker experimentJournal of Electronic Materials, 1979
- An alternative marker experiment in the formation of Mo and W silicidesApplied Physics Letters, 1978
- Oxidation mechanisms in WSi2 thin filmsApplied Physics Letters, 1978
- Reaction kinetics of molybdenum thin films on silicon (111) surfaceJournal of Applied Physics, 1978