Base doping limits in heterostructure bipolar transistors
- 9 April 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (15), 1460-1462
- https://doi.org/10.1063/1.102498
Abstract
Heterostructure bipolar transistors are used to experimentally determine band offsets in lattice‐matched In0.53Ga0.47As devices. Valence‐band offsets of ΔEV=0.24 eV for Al0.48In0.52As/In0.53Ga0.47As and ΔEV=0.34 eV for InP/In0.53Ga0.47As are measured. Because of band filling in the base, these values place important constraints on p‐type doping levels and emitter injection efficiency in practical devices.Keywords
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