X-ray reflectivity and diffuse-scattering study ofCoSi2layers in Si produced by ion-beam synthesis

Abstract
Buried single crystalline layers of CoSi2 in Si with (001) and (111) surfaces were produced by ion-beam synthesis. Depending on the annealing procedure, surface orientation, and ion dose, different results in interface quality are achieved. X-ray experiments under grazing incidence conditions (specular and diffuse scattering) are used for the investigation of their properties. We present a quantitative evaluation of the diffuse scattering underneath the specular reflectivity for multilayer systems with strongly varying electron densities.