X-ray reflectivity and diffuse-scattering study oflayers in Si produced by ion-beam synthesis
- 15 February 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 47 (8), 4385-4393
- https://doi.org/10.1103/physrevb.47.4385
Abstract
Buried single crystalline layers of in Si with (001) and (111) surfaces were produced by ion-beam synthesis. Depending on the annealing procedure, surface orientation, and ion dose, different results in interface quality are achieved. X-ray experiments under grazing incidence conditions (specular and diffuse scattering) are used for the investigation of their properties. We present a quantitative evaluation of the diffuse scattering underneath the specular reflectivity for multilayer systems with strongly varying electron densities.
Keywords
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