Low threshold voltage ZnSe:Mn thin film electroluminescent cells prepared by molecular beam deposition
- 1 May 1983
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5), 2153-2155
- https://doi.org/10.1063/1.332392
Abstract
An Al/ZnSe:Mn/ITO dc-operated electroluminescent (EL) cell was prepared by molecular beam deposition. The threshold voltage was 6–10 V, which is the lowest value in these types of EL cells reported so far. The deposited ZnSe:Mn layer was a polycrystal with only (111) orientation and exhibited sharp x-ray diffraction and reflection high energy electron diffraction patterns which have been hardly obtained by conventional evaporation methods. This low threshold voltage EL cell has a great potential of application in panel displays because of the low cost and the large size of Indium-Tin-Oxide (ITO)-coated glass substrates.Keywords
This publication has 5 references indexed in Scilit:
- Low-temperature formation of polycrystalline silicon films by molecular beam depositionJournal of Applied Physics, 1982
- Molecular beam epitaxial ZnSe:Mn dc electroluminescent cell with very low threshold voltageJournal of Applied Physics, 1981
- Pulse-Excited Characteristics of Au/ZnSe : Mn/n-GaAs Low Threshold Thin Film DC EL CellJapanese Journal of Applied Physics, 1980
- Filamentary AC electroluminescence in ZnS:MnJournal of Electronic Materials, 1979
- Time resolved spectroscopy of ZnS : Mn by dye laser techniqueJournal of Luminescence, 1976