Mott transition field effect transistor
- 5 August 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (6), 780-782
- https://doi.org/10.1063/1.121999
Abstract
A field effect transistor fabricated with an oxide channel has been shown to demonstrate switching characteristics similar to conventional silicon metal oxide field effect transistors. This device is believed to operate via a Mott metal-insulator transition induced by the gate field, and offers a potential technology alternative for the regime beyond silicon scaling limitations.Keywords
This publication has 25 references indexed in Scilit:
- Electric-field effect on transport and superconducting properties of YBa2Cu3O7−xPhysica C: Superconductivity and its Applications, 1996
- A ferroelectric transparent thin-film transistorApplied Physics Letters, 1996
- Giant Electric Field Effect on Al/BaTiO 3/(Y 0.6Pr 0.4)Ba 2Cu 3Oy StructuresJapanese Journal of Applied Physics, 1996
- High- transistorsSuperconductor Science and Technology, 1996
- Ferroelectric Field Effect in Epitaxial Thin Film Oxide SrCuO 2 /Pb(Zr 0.52 Ti 0.48 )O 3 HeterostructuresScience, 1995
- Epitaxial all-perovskite ferroelectric field effect transistor with a memory retentionApplied Physics Letters, 1995
- Effect of atomic oxygen on the initial growth mode in thin epitaxial cuprate filmsPhysical Review B, 1994
- Short channel models and scaling limits of SOI and bulk MOSFETsIEEE Journal of Solid-State Circuits, 1994
- Measurement and Thermodynamic Analyses of the Dielectric Constant of Epitaxially Grown SrTiO3 FilmsJapanese Journal of Applied Physics, 1993
- Superconducting critical temperature and electrical resistivity of the system Y1−xPrxBa2Cu3O6.95 (0⩽x⩽1)Physica C: Superconductivity and its Applications, 1992