Stoichiometric disturbances in ion implanted compound semiconductors
- 1 August 1981
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (8), 5050-5055
- https://doi.org/10.1063/1.329448
Abstract
Disturbances in the stoichiometry of compound semiconductors which result from ion implantation are calculated using a Boltzmann transport equation approach. Results for 50-keV boron, 150-keV silicon, and 400-keV selenium implanted into silicon carbide, indium phosphide, and gallium arsenide are presented. Possible complications in the annealing of such implants are discussed.Keywords
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