Resonant tunneling through a HgTe/Hg1−xCdxTe double barrier, single quantum well heterostructure
- 10 November 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (19), 1293-1295
- https://doi.org/10.1063/1.97390
Abstract
Resonant tunneling has been demonstrated through a double barrier, single quantum well HgTe/Hg1−xCdxTe heterostructure for the first time. Negative differential resistance is observable at room temperature, exhibiting a 1.4:1 peak to valley tunnel current ratio. The observation provides direct evidence for the existence of the proposed intrinsic interface state.Keywords
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