Performance and detection mechanism of a new class of catalyst (Pd, Pt, or Ag)-adsorptive oxide (SnOx or ZnO)-insulator-semiconductor gas sensors
- 1 October 1994
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 22 (1), 47-55
- https://doi.org/10.1016/0925-4005(94)01265-2
Abstract
No abstract availableKeywords
This publication has 27 references indexed in Scilit:
- Transport properties of a Pd/insulator/a-Si:H Schottky diode for hydrogen detectionSensors and Actuators, 1983
- Pd/a-Si:H metal-insulator-semiconductor Schottky barrier diode for hydrogen detectionApplied Physics Letters, 1983
- Hydrogen sensitive mos-structures part 2: characterizationSensors and Actuators, 1982
- Transition metal-gate MOS gaseous detectorsIEEE Transactions on Electron Devices, 1982
- Hydrogen sensitive mos-structuresSensors and Actuators, 1981
- Surface and interface dipoles on catalytic metal filmsSolid State Communications, 1980
- Detection of H2S with Pd-gate MOS field-effect transistorsJournal of Applied Physics, 1976
- Influence of hydrogen on PtSiO2Si structuresSolid State Communications, 1976
- A hydrogen-sensitive Pd-gate MOS transistorJournal of Applied Physics, 1975
- A hydrogen−sensitive MOS field−effect transistorApplied Physics Letters, 1975