Extended long-wavelength λ=11–15-μm GaAs/AlxGa1−xAs quantum-well infrared photodetectors

Abstract

Success has been achieved in extending the spectral wavelength of GaAs/Al_xGa_1−xAs quantum‐well infrared photodetectors to significantly longer wavelengths, λ=11–15 μm. High responsivity R_p = 0.5 A/W, high quantum efficiency η=12%, and high detectivity D* = 3 × 10¹⁰ cm √Hz/W, as well as an excellent noise equivalent temperature difference NEΔT=4 mK have been achieved at T=50 K. High performance NEΔT=19 mK has also been achieved at an even higher temperature of T=60 K.