Lognormal Lateral Distribution of Barrier Height in Au/n-GaAs Schottky Junctions?
- 1 January 1992
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 29 references indexed in Scilit:
- Interpretation of the asymmetry of the first neighbour peak in the pair correlation function of amorphous materialsMaterials Science and Engineering: A, 1991
- Schottky-barrier inhomogeneity at epitaxialinterfaces on Si(100)Physical Review Letters, 1991
- The Au/CdTe interface: an investigation of electrical barriers by ballistic electron emission microscopySemiconductor Science and Technology, 1990
- Evidence for multiple barrier heights in P-type PtSi Schottky-barrier diodes from I-V-T and photoresponse measurementsSolid-State Electronics, 1990
- Ballistic-electron-emission microscopy investigation of Schottky barrier interface formationApplied Physics Letters, 1989
- Spatial variations of interface properties in palladium silicide/silicon structuresSemiconductor Science and Technology, 1988
- Engineered Schottky barrier diodes for the modification and control of Schottky barrier heightsJournal of Applied Physics, 1987
- On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/p-InP Schottky barriersSolid-State Electronics, 1986
- Structural Characterization and Schottky Barrier Height Measurements of Epitaxial NiSi2 on SiMRS Proceedings, 1985
- A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodesJournal of Applied Physics, 1983