Effects of microcracking on AlxGa1−xAs-GaAs quantum well lasers grown on Si
- 5 September 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (10), 874-876
- https://doi.org/10.1063/1.100100
Abstract
Data are presented demonstrating continuous (cw) 300 K operation of p‐n AlxGa1−xAs‐GaAs quantum well heterostructure lasers grown on Si and fabricated with naturally occurring microcracks running parallel to or perpendicular to the laser stripe. Operation for over 17 h is demonstrated for a diode with a parallel microcrack inside the active region. Diodes with microcracks perpendicular to the laser stripe exhibit relatively ‘‘square’’ light output versus current (L‐I) characteristics and spectral behavior indicating internal reflections involving coupled multiple (internal) cavities. The lasers have operated (cw, 300 K) as long as 16 h.Keywords
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