Quantitative analysis of the polarization fields and absorption changes in InGaN/GaN quantum wells with electroabsorption spectroscopy
- 15 July 2002
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 81 (3), 490-492
- https://doi.org/10.1063/1.1493229
Abstract
Electroabsorption measurements are reported for wurtzite InGaN/GaN quantum wells. The electroabsorption technique allows exact quantitative analysis of absorption and absorption changes in InGaN quantum wells and barrier layers, with recorded field-induced absorption changes as large as 7000 cm−1 below and almost 20000 cm−1 above the band edge. The technique thus allows precise determination of the strong internal fields that originate from strain-induced polarization and differences in spontaneous polarization. The fields measured on functioning diodes vary between 1.1 and 1.4 MV/cm for indium concentrations in InGaN quantum wells ranging from 7% to 9%.Keywords
This publication has 7 references indexed in Scilit:
- Measurement of piezoelectric field and tunneling times in strongly biased InGaN/GaN quantum wellsApplied Physics Letters, 2001
- Nonlinear macroscopic polarization in III-V nitride alloysPhysical Review B, 2001
- Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structuresApplied Physics Letters, 1998
- Determination of piezoelectric fields in strained GaInN quantum wells using the quantum-confined Stark effectApplied Physics Letters, 1998
- Large band gap bowing of InxGa1−xN alloysApplied Physics Letters, 1998
- Spontaneous polarization and piezoelectric constants of III-V nitridesPhysical Review B, 1997
- Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum WellsJapanese Journal of Applied Physics, 1997