Influence of the Source–Gate Distance on the AlGaN/GaN HEMT Performance
- 23 April 2007
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 54 (5), 1071-1075
- https://doi.org/10.1109/ted.2007.894614
Abstract
In this paper, we present Monte Carlo simulation results on the source-gate (S-G) scaling effects in GaN-based HEMTs. The results show that a downscaling of the S-G distance can improve device performance, enhancing the output current and the device transconductance. The main reason for this effect is related to the peculiar dynamic of electrons in the GaN-based HEMTs, which leads to a nonsaturated velocity regime in the source access region, even for high drain applied voltages. On the contrary, the gate-drain distance does not affect the output current within the analyzed device geometries. Based on these results, new optimization strategies for GaN HEMTs could be definedKeywords
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