MOCVD n-type doping of GaAs and GaAlAs using silicon and selenium and fabrication of double heterostructure bipolar transistor
- 1 September 1984
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 68 (1), 453-460
- https://doi.org/10.1016/0022-0248(84)90449-4
Abstract
No abstract availableKeywords
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