Adsorption of cesium on gallium arsenide (110)
- 31 July 1977
- journal article
- Published by Elsevier in Surface Science
- Vol. 65 (2), 668-686
- https://doi.org/10.1016/0039-6028(77)90473-3
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- Isobar, low energy electron diffraction and loss spectroscopy measurements of cesium covered (110) gallium arsenideSolid State Communications, 1976
- LEED, auger electron spectroscopy (AES) and photoemission studies of the adsorption of cesium on the epitaxially grown GaAs(110) surfaceSurface Science, 1976
- Semiconductor Surface Reconstruction: The Rippled Geometry of GaAs(110)Physical Review Letters, 1976
- Kinetics of thermal desorption using Auger electron spectroscopy application to cesium covered (110) gallium arsenideRevue de Physique Appliquée, 1976
- AES and LEED study of the activation of GaAsCsO negative electron affinity surfacesSurface Science, 1975
- Different bonding states of Cs and O on highly photoemissive GaAs by flash−desorption experimentsApplied Physics Letters, 1975
- LEED-Auger characterization of GaAs during activation to negative electron affinity by the adsorption of Cs and OSurface Science, 1975
- LEED, Auger Electron Spectroscopy (AES) and photoemission studies of the cesium covered GaAs (110) surfaceSurface Science, 1974
- A model for the Auger electron spectroscopy of systems exhibiting layer growth, and its application to the deposition of silver on nickelSurface Science, 1973
- Aluminosilicate Alkali Ion SourcesReview of Scientific Instruments, 1966