Nitridization of gallium arsenide surfaces: Effects on diode leakage currents
- 1 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (7), 684-686
- https://doi.org/10.1063/1.94877
Abstract
Nitridization of GaAs surfaces by exposure to a nitrogen or nitrogen-hydrogen plasma is known to form a surface coating rich in GaN. We show that pretreatment in a hydrogen plasma at room temperature followed by production of this wider band-gap material by nitrogen plasma treatment at 500 °C for 5 h reduces the reverse leakage current of Au-GaAs (ND−NA =5×1017 cm−3) Schottky diodes by typically an order of magnitude at 300 K.Keywords
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