Dose dependence of penetration and damage profiles of P+-channeled ions in silicon simulated by computer
- 1 January 1975
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 27 (1-2), 89-95
- https://doi.org/10.1080/00337577508233013
Abstract
A computer model has been developed to handle the effect of radiation damage produced by an ion incident along a crystal direction on the propagation of the following one. The lattice disorder is schematized through a certain number of interstitials and vacancies proportional to the fraction of displaced atoms. Both range and damage profiles are computed for 200-keV P+ ions channeled along the [110] axis in Si at different doses, ranging from 1 × 1013 to 4 × 1015 ions/cm2 and compared with experimental results previously obtained in our laboratory. The agreement is very good for range and satisfactory for damage profiles. Accuracy and limitations of the model are discussed in terms of current radiation damage theories in silicon.Keywords
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