Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate
- 1 May 1980
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 19 (5)
- https://doi.org/10.1143/jjap.19.899
Abstract
Zn-doping in In0.53Ga0.47As was investigated. The dependence of the resistivity and Hall mobility of Zn-doped In0.53Ga0.47As upon the hole concentration is found to be the same as that of Zn-doped In0.15Ga0.85As. Photoluminescence in Zn-doped In0.53Ga0.47As is investigated in relation to hole concentration. In0.53Ga0.47As homojunction diodes are made, and minoritycarrier diffusion lengths of holes and electrons are derived from the EBIC (electron beaminduced current) intensity which is dependent upon the distance from the junction interface.Keywords
This publication has 13 references indexed in Scilit:
- In0.53Ga0.47As/In1-xGaxAsyP1-yDouble Heterostructure Lasers with Emission Wavelength of 1.67 µm at Room TemperatureJapanese Journal of Applied Physics, 1978
- GaInAsP/InP avalanche photodiodesApplied Physics Letters, 1978
- InP-GaxIn1−xAsyP1−y double heterostructure for 1.5 μm wavelengthApplied Physics Letters, 1978
- Growth and characterization of lattice-matched epitaxial films of GaxIn1−xAs/InP by liquid-phase epitaxyJournal of Electronic Materials, 1978
- Properties of Liquid Phase Epitaxial In1 − x Ga x As ( x ≅ 0.5 ) on InP SubstrateJournal of the Electrochemical Society, 1978
- Liquid phase epitaxial growth of InGaAs on InPJournal of Crystal Growth, 1976
- Determination of electron diffusion length from photoluminescence measurements in InxGa1−xAs junctionsJournal of Applied Physics, 1975
- Growth and characterization of liquid−phase epitaxial InxGa1−xAsJournal of Applied Physics, 1975
- Electron Mobility in In1-xGaxAs Epitaxial LayerJapanese Journal of Applied Physics, 1974
- Ge-doped InxGa1−xAs p−n junctionsSolid-State Electronics, 1973