LPE Growth of GaInAsP on (100)GaAs by a Two-Phase-Solution Technique
- 1 January 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (1A), L52
- https://doi.org/10.1143/jjap.23.l52
Abstract
LPE growth condition and characteristic of GaInAsP lattice matched with (100)GaAs by a two-phase-solution growth technique is reported. This technique is applied to the LPE growth at T g=840°C and high quality Ga0.55In0.45As0.07P0.93 is obtained.Keywords
This publication has 11 references indexed in Scilit:
- Feasibility of the LPE Growth of AlxGayIn1-x-yP on GaAs SubstratesJapanese Journal of Applied Physics, 1983
- Orientation Dependence of LPE Growth Behavior of GaxIn1-xP on (100) and (111)B GaAs SubstratesJapanese Journal of Applied Physics, 1982
- LPE growth of In0.48Ga0.52As0.01P0.99 lattice-matched to GaAs from an In melt rich in PElectronics Letters, 1982
- GaxIn1−xAsyP1−y/Gaxʹ,In1−xʹ,Asyʹ,P1−yʹ, DH visible LED grown on (100) GaAs by LPE in the range of 670–680 nmElectronics Letters, 1982
- Fabrication and Visible-Light-Emission Characteristics of Room-Temperature-Operated InGaPAs DH Diode Lasers Grown on GaAs SubstratesJapanese Journal of Applied Physics, 1981
- Photoluminescence of lattice-matched In1−xGaxP1−yAsy layers on GaAsApplied Physics Letters, 1980
- LPE Growth and Luminescence of In1-xGaxPyAs1-y on (1, 0, 0) GaAs with Band-Gap Energy in Region of 1.569 eV≤Eg≤1.893 eVJapanese Journal of Applied Physics, 1980
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with (100) Substrate in the Range of 1.2–1.5 µmJapanese Journal of Applied Physics, 1978
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Luminescence, laser, and carrier-lifetime behavior of constant-temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAsApplied Physics Letters, 1974