Energy-Band Offset of In0.53Ga0.47As–In0.52(Ga1-xAIx)0.48As Heterostructures, Determined by Photoluminescenee Excitation Spectroscopy of Quasi-Parabolie Quantum Wells Grown by MBE
- 1 October 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (10R)
- https://doi.org/10.1143/jjap.26.1709
Abstract
The conduction-band discontinuity, ΔE c(x), of In0.53Ga0.47As–In0.52(Ga1-x Al x )0.48As heterostructures was determinedto be ΔE c(x)=(0.73±0.03)ΔE g(x) (0\leqslantx\leqslant1), by a comparison of the electron (and hole) energy levels in quasi-parabolic (multi-stepped) In0.53Ga0.47As–In0.52(Ga1-x Al x )0.48 As quantum welts observed by photoluminescence excitation spectroscopy, with numerical solutions of Schrödinger's equation, where non-parabolicity of the conduction band was considered.Keywords
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