High resolution imaging of the interfacial region in metal-insulator-semiconductor and Schottky diodes
- 1 May 1983
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 54 (5), 2885-2887
- https://doi.org/10.1063/1.332289
Abstract
Interfacial oxides can greatly influence the properties of metal-semiconductor heterojunctions as demonstrated by recent work on metal-insulator-semiconductor solar cells. The physical structure of such interfacial regions is examined using High Resolution Electron Microscopy. Simultaneous imaging of the lattice structure on both sides of the interfacial region is reported for the first time.Keywords
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