Effect of Hydrogen on Pseudomorphic ZnSe onto GaAs by the Alternate Gas Supply of Dimethylzinc and Dimethylselenide in the MOMBE System
- 1 November 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (11R)
- https://doi.org/10.1143/jjap.29.2440
Abstract
We investigated the pseudomorphic ZnSe on GaAs grown by the alternate gas source supply of dimethylzinc (DMZ) and dimethylselenide (DMSe) in the MOMBE system. We found through the in-situ RHEED monitoring that two-dimensional nucleation occurs from the early stage of growth if the GaAs substrates are pretreated by (NH4)2S x solution. A growth rate of about 0.95 ML (monomolecular layer) ZnSe per one operational cycle of gas source supply could be achieved on (NH4)2S x -pretreated GaAs substrates at 200°C under hydrogen gas exposure during growth. This result indicates that nearly complete atomic coverage is successfully proceeded in each step as a result of the termination of alkyl radicals adsorbed on the surface by hydrogen. Crystal qualities were much improved by both the substrate pretreatment and the hydrogen gas supply.Keywords
This publication has 10 references indexed in Scilit:
- Atomic Layer Epitaxy of ZnS on GaAs Substrates by Metalorganic Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1990
- Growth of ZnSe/GaAs Superlattices by Migration-Enhanced EpitaxyJapanese Journal of Applied Physics, 1990
- Metalorganic Molecular Beam Epitaxial Growth of ZnSe and ZnS on GaAs Substrates Pretreated with (NH4)2Sx SolutionJapanese Journal of Applied Physics, 1990
- Electron counting model and its application to island structures on molecular-beam epitaxy grown GaAs(001) and ZnSe(001)Physical Review B, 1989
- A comparative study of growth of ZnSe films on GaAs by conventional molecular-beam epitaxy and migration enhanced epitaxyJournal of Vacuum Science & Technology B, 1989
- Atomic layer epitaxy of ZnSe-ZnTe strained layer superlatticesJournal of Crystal Growth, 1989
- Reflection high-energy electron diffraction observations during growth of ZnSxSe1−x(0≤x≤1) by molecular-beam epitaxyJournal of Vacuum Science & Technology B, 1988
- Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAsApplied Physics Letters, 1986
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- Luminescence studies of individual dislocations in II-VI (ZnSe) and III-V (InP) semiconductorsJournal of Physics C: Solid State Physics, 1984