Heavily Si-Doped GaAs and AlAs/n-GaAs Superlattice Grown by Molecular Beam Epitaxy
- 1 August 1985
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 24 (8A), L572
- https://doi.org/10.1143/jjap.24.l572
Abstract
Heavy Si doping of GaAs and AlAs/n-GaAs superlattice prepared by molecular beam epitaxy has been studied. By lowering the substrate temperature below 420°C during the growth, carrier concentrations of 1.8×1019 cm-3 with a perfect mirror surface morphology were realized for GaAs and AlAs/n-GaAs superlattice, respectively. The high carrier concentration is ascribed to the suppression of Si-Si pair formation by the low temperature growth procedure.Keywords
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