Effect of hydrogen on the diode properties of reactively sputtered amorphous silicon Schottky barrier structures
- 15 October 1981
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (8), 612-614
- https://doi.org/10.1063/1.92821
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Use of nuclear reaction analysis to characterize the elemental composition and density of thin film amorphous siliconSolar Cells, 1980
- Internal photoemission in hydrogenated amorphous-Si filmsApplied Physics Letters, 1980
- Theoretical models for the electronic structures of hydrogenated amorphous siliconPhysical Review B, 1980
- Sputtered hydrogenated amorphous siliconJournal of Electronic Materials, 1979
- The interfacial layer in MIS amorphous silicon solar cellsJournal of Applied Physics, 1979
- (Invited) Photovoltaic Properties of Undoped Discharge-Produced Amorphous SiliconJapanese Journal of Applied Physics, 1978
- Photoelectron Spectra of Hydrogenated Amorphous SiliconPhysical Review Letters, 1977
- Schottky-barrier characteristics of metal–amorphous-silicon diodesApplied Physics Letters, 1976
- Studies of tunnel MOS diodes I. Interface effects in silicon Schottky diodesJournal of Physics D: Applied Physics, 1971