High power (2.1 W) 10-stripe AlGaAs laser arrays with Si disordered facet windows
- 8 December 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (23), 1572-1574
- https://doi.org/10.1063/1.97283
Abstract
Silicon impurity induced disordering has been used to fabricate lasers with reduced facet absorption (facet windows) exhibiting enhanced catastrophic facet damage levels over comparable nonwindow devices. Power levels of 1.2 W cw were obtained from uncoated output facet devices and 2.1 W cw were obtained for a device with a coated output facet. Evidence is presented that the window region formed by silicon diffusion is a low-loss waveguide which confines the propagating wave, increasing the efficiency of the device.Keywords
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