OMVPE of Zn-based II–IV semiconductors using methylmercaptan as a novel sulfur source
- 1 January 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 86 (1-4), 263-267
- https://doi.org/10.1016/0022-0248(90)90727-3
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- MOCVD Growth of ZnSxSe1-x Epitaxial Layers Lattice-Matched to GaAs Using Alkyls of Zn, S and SeJapanese Journal of Applied Physics, 1985
- The growth by MOCVD using new group VI sources and assessment by HRTEM and Cl of Zn-based II–VI single crystal layersJournal of Crystal Growth, 1985
- Coherent Growth of ZnSe on GaAs by MOCVDJapanese Journal of Applied Physics, 1985
- Growth of low-resistivity high-quality ZnSe, ZnS films by low-pressure metalorganic chemical vapour depositionJournal of Crystal Growth, 1985
- Growth temperature dependence of crystallographic and luminescent properties of ZnSxSe1−x (0 ⪕ x ⪕ 1) by low-pressure MOVPEJournal of Crystal Growth, 1984
- Growth and Properties of Undoped n-Type ZnSe by Low-Temperature and Low-Pressure OMVPEJapanese Journal of Applied Physics, 1984
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Photoluminescence and heterojunction properties of ZnSxSe1-x Epitaxial layers on GaAs and Ge Grown by organometallic CVDJournal of Electronic Materials, 1981
- Growth and characterization of undoped ZnSe epitaxial layers obtained by organometallic chemical vapour depositionThin Solid Films, 1978
- Organometallic vapor deposition of epitaxial ZnSe films on GaAs substratesApplied Physics Letters, 1978