Molecular-beam-epitaxial growth and selected properties of GaAs layers and GaAs/(Al,Ga)As superlattices with the (211) orientation
- 15 January 1986
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 59 (2), 488-494
- https://doi.org/10.1063/1.336658
Abstract
No abstract availableKeywords
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