Crystallographic orientation control of silicon stripes in SiO2 grooves using a new double laser annealing technique

Abstract

Crystallographic orientation control using a new double laser annealing of silicon stripes in SiO₂ grooves is presented. In the laser recrystallization of silicon stripes in the structure consisting of SiO₂ grooves/polysilicon sublayer/quartz glass substrates, first, a part of the Si stripe is intentionally recrystallized by a cw Nd:yttrium aluminum garnet laser to obtain 〈100〉 texture with a small grain size. Next, using these 〈100〉 oriented Si grains as seed crystals, 〈100〉 oriented large Si stripes are obtained by scanning a cw Ar ion laser along the stripe direction. This double laser annealing technique for orientation control can potentially be used to fabricate three‐dimensional devices.