Photon-assisted dry etching of GaAs
- 15 August 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (4), 475-477
- https://doi.org/10.1063/1.95221
Abstract
UV radiation from an ArF laser has been used to perform large-area etching of single-crystal GaAs. The process is based on photochemical production of methyl or trifluoromethyl, and bromine radicals. The etching is anisotropic and features <1 μm have been made.Keywords
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