Diamond MESFET using ultrashallow RTP boron doping
- 1 April 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (4), 157-159
- https://doi.org/10.1109/55.75749
Abstract
A diamond p-type depletion-mode MESFET was fabricated using a novel doping technique to drive in and activate boron in type IIa diamond. An ultrashallow p-doped channel of less than 500 AA was created by this rapid-thermal-processing (RTP) solid-state diffusion using cubic boron nitride as the dopant source. The MESFET was observed to pinch off at high positive gate bias, and reverse-bias leakage was below 10/sup -12/ A at +5 V. The ultrashallow channel depth is believed to be a critical factor in obtaining excellent device modulation.Keywords
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