Composite Silicide Gate Electrodes - Interconnections for VLSI Device Technologies
- 1 August 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 15 (4), 482-489
- https://doi.org/10.1109/jssc.1980.1051426
Abstract
A potentially severe limit on density, performance, and virability of polysilicon-gate technologies for VLSI applications, is the high resistivity of polycrystalline silicon. Composite structures of highly conductive molybdenum or tungsten disilicide on top of polysilicon (polycide) are shown to be a viable alternative gate electrode and interconnect level. Sheet resistance values of 1-3 Omega//spl square/ for an integrated structure are easily attainable. IGFET devices fabricated to channel lengths of >=1.4 /spl mu/m show the polycide devices to be indistinguishable from normal polysilicon gate devices.Keywords
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