Two-dimensional electron gas in a Ga0.47In0.53As/InP heterojunction grown by chemical beam epitaxy
- 13 October 1986
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (15), 960-962
- https://doi.org/10.1063/1.97495
Abstract
Shubnikov–de Haas, quantum Hall effect, and cyclotron resonance measurements revealed the existence of a high mobility, two‐dimensional electron gas at the Ga0.47In0.53As/InP heterointerface grown by chemical beam epitaxy. Enhanced electron mobilities were as high as ∼130×103 cm2/V s at 4.2 K. A striking feature in the data which also indicates that the sample is of high quality is the large number of Shubnikov–de Haas oscillation periods observed. Oscillations were observable up to a Landau filling factor of around 50, corresponding to a Landau level index of 25.Keywords
This publication has 11 references indexed in Scilit:
- Chemical beam epitaxial growth of extremely high quality InGaAs on InPApplied Physics Letters, 1986
- First observation of the quantum Hall effect in a Ga0.47In0.53As-InP heterostructure with three electric subbandsApplied Physics Letters, 1986
- Growth of high quality GaInAs on InP buffer layers by metalorganic chemical vapor depositionApplied Physics Letters, 1985
- High field electron transport in n-InP/GaInAs two-dimensional electron gasApplied Physics Letters, 1985
- Chemical beam epitaxy of InP and GaAsApplied Physics Letters, 1984
- Alloy scattering limited mobility of two-dimensional electron gas formed in In0.53Ga0.47AsSurface Science, 1984
- Two-dimensional electron gas in a selectively doped InP/In0.53 Ga0.47As heterostructure grown by chloride transport vapor phase epitaxyApplied Physics Letters, 1983
- Two-dimensional electron gas at a molecular beam epitaxial-grown, selectively doped, In0.53Ga0.47As-In0.48Al0.52As interfaceApplied Physics Letters, 1982
- Two-dimensional electron gas in a In0.53Ga0.47As-InP heterojunction grown by metalorganic chemical vapor depositionApplied Physics Letters, 1982
- Two-dimensional electron gas at a semiconductor-semiconductor interfaceSolid State Communications, 1979