Low-Temperature Cleaning of HF-Passivated Si(111) Surface with VUV Light
- 1 July 1989
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 28 (7A), L1274
- https://doi.org/10.1143/jjap.28.l1274
Abstract
Photon-stimulated desorption (PSD) of H+ ions from the HF-passivated Si(111) surface, which is terminated with hydrogen, has been studied using synchrotron radiation. Desorption of H+ ions due to Si-H bond breaking is observed at photon energies above 17 eV. A distinct dependence of the H+-PSD yield on the angle of incidence of a photon beam also is observed. It is found that the H+-PSD yield correlates well with the photoabsorbance. The present results suggest the feasibility of cleaning the HF-passivated Si(111) surface at low-temperature by means of irradiation of vacuum-ultraviolet (VUV) light.Keywords
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