Liquid phase epitaxy and characterization of rare-earth-ion (Yb, Er) doped InP
- 2 November 1987
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 85 (3), 345-356
- https://doi.org/10.1016/0022-0248(87)90463-5
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Single longitudinal mode operation of Er-doped 1.5-μm InGaAsP lasersApplied Physics Letters, 1987
- Yb-doped InP grown by metalorganic chemical vapor depositionApplied Physics Letters, 1987
- Erbium doping of molecular beam epitaxial GaAsApplied Physics Letters, 1987
- Observation of enhanced single longitudinal mode operation in 1.5-μm GaInAsP erbium-doped semiconductor injection lasersApplied Physics Letters, 1986
- Rare earth ions in LPE III-V semiconductorsJournal of Crystal Growth, 1986
- Photoluminescence study of residual shallow acceptors in liquid-encapsulated Czochralski-grown InPJournal of Applied Physics, 1986
- Rare earth activated luminescence in InP, GaP and GaAsJournal of Crystal Growth, 1983
- The ytterbium-indium systemJournal of the Less Common Metals, 1971